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Altatech Semiconductor ships additional CVD Equipment to Fraunhofer ENAS for applications including MEMS, 3D TSV

Thu, 05/20/2010 - 3:37am
I-Micronews

This marks Fraunhofer ENAS’ second order for a CVD tool from Altatech Semiconductor. The previously installed system is being used to deposit diffusion barrier and copper layers for advanced copper damascene interconnects and through-silicon-via (TSV) features.

Fraunhofer ENAS is scheduled to install the new AltaCVD system in its back-end-of-line (BEOL) cleanroom facility in Chemnitz during the second quarter. Applications support will be provided by Altatech Semiconductor in Berlin.

The AltaCVD system uses liquid precursors to create highly uniform thin films. As called out in the International Technology Roadmap for Semiconductors (ITRS), virtually all of the next-generation precursors required for advanced wafer processing, such as 3D integration, are available only in liquid form. This includes ruthenium (Ru), hafnium (Hf), copper (Cu), and a ternary alloy of germanium, tin and tellurium (GeTeSn).

“After evaluating Altatech’s innovative technology and its AltaCVD equipment, we have ordered a system for our lab, where we’re developing nanometric thin films to advance the state of semiconductor processing. The use of liquid-phase precursor injection and evaporation is a key enabling technology for this work,” said Prof. Stefan E. Schulz, head of back-end-of-line operations at Fraunhofer ENAS.

Altatech Semiconductor’s AltaCVD platform uses direct injection of liquid precursors and an advanced flash-vaporization system in processing wafers up to 300 mm. The modular system can accommodate a wide range of vaporization and deposition temperatures, enabling users to select the optimal process windows for their specific applications, which can include deposition of advanced materials for high-k gate dielectrics, metal gate electrodes, capacitors and 3D integration. For thermal CVD or RF-enhanced deposition steps, a low-frequency plasma enables tuning of the thin film’s mechanical, electrical and optical properties.

“Through our partnerships with Fraunhofer ENAS and other leading research centers, we are continuing to develop liquid-precursor deposition processes for high-k/metal gates, through-silicon-vias, memory and capacitor applications,” said Jean-Luc Delcarri, president of Altatech Semiconductor. “We’re also working with IDMs and foundries to bring liquid-precursor deposition to their high-volume 300 mm fabs. And we’ve begun applying our CVD technology to create advanced thin films for solar cells, high-brightness LEDs and other microelectronics markets.

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