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Ostendo & Oxford Instruments-TDI now offering semi-polar GaN wafers for LED & LD device makers

Fri, 06/04/2010 - 11:41pm
I-Micronews

This joint development now provides the opportunity to leading High Brightness HBLED and Laser Diode developers to increase optical efficiency significantly compared with structures grown on conventional c-plane GaN substrates. With TDI's HVPE technology the semi-polar GaN can be utilized in high brightness LEDs, laser diodes, and high electron mobility transistors (HEMTs).

 

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