The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7mΩ with 5V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4mΩ. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.
Efficient Power Conversion Corp. introduces two lead-free and RoHS compliant eGaN FETs
Mon, 03/21/2011 - 9:37pm