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Efficient Power Conversion Corp. introduces two lead-free and RoHS compliant eGaN FETs

Mon, 03/21/2011 - 9:37pm
I-Micronews

The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7mΩ with 5V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4mΩ. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

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