Powdec announces breakthrough Gallium Nitride transistor design

Tue, 03/29/2011 - 2:37am

Powdec K.K. today announced that, together with Sheffield University, they have succeeded in developing breakthrough high voltage Gallium Nitride (GaN) power transistors. This was realized by creating semiconductor hetero-junction structures based on novel principles, which solve the problems of conventional transistors and dramatically improve the transistor performance. In the transistors, current collapse is almost completely eliminated, power losses are reduced and high break-down voltages of more than 1,100 Volts (V) are realized. These new GaN transistors are suited to be used in a broad range of equipment from inverters in consumer appliances to server power supplies, electric vehicles and industrial motors to lower power use.

Powdec’s breakthrough HFET structure.
Powdec's breakthrough HFET structure.

Gallium Nitride is a next generation semiconductor that enables power devices to have lower power losses and higher energy efficiency compared to present silicon devices. Together with Powdec’s previously announced GaN diodes, these GaN transistors will be core devices enabling an energy efficient, green future.



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