Turnkey Diode Laser System Delivers High Power and Brightness
Tue, 06/17/2008 - 5:16am
The new system offers higher output power and brightness than previously available. Specifically, the HB-diode system delivers 75 W of power at either 808 nm from a 200 µm core 0.22 NA fiber, or 976 nm from a 400 µm core 0.22 NA fiber. The HB-diode system is a fully integrated, microprocessor controlled instrument that operates from 110/220 VAC, and enables user control of diode output through either a front panel keypad or electronic interface, including analog, TTL, RS-232, and RS-485. Other convenience features include air cooling, a rack mounting option, and a coaxial, visible wavelength aiming beam. The high power and brightness of the new HB-diode system make it particularly well suited for applications in medial therapeutics.