Advanced Power Electronics has launched an asymmetric-dual N-channel enhancement mode power MOSFET targeting synchronous buck dc/dc converter power designs.
Packaged in a small 3mm square PMPAK3x3, the AP6950GYT comprises a “high-side” control MOSFET (CH-1) and a “low-side” synchronous MOSFET (CH-2), providing a compact solution optimized for synchronous buck applications. Drain-Source breakdown voltage (BVDSS) for both channels is 30V, while on-resistance is low at 18mΩ (CH-1) and 10.5mΩ (CH-2). Devices are RoHS-compliant and halogen-free.
For more information, visit www.a-powerusa.com.