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Ultra-small P-channel Enhancement-Mode Power MOSFETs

Tue, 10/15/2013 - 2:56pm
MDT Staff

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Advanced Power Electronics has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum Drain-Source Breakdown Voltage (BVDSS) of -20V, maximum RDS (ON) of 145mohms, and a maximum Continuous Drain Current (ID) at 25degC of -1.8A.

For more information, visit www.a-powerusa.com.

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