When they checked the temperature characteristics of the SBD, they found that its current characteristics (when it is turned off), etc do not have a temperature dependence within a temperature range of 25-200°C.
This was announced by Osaka University and Japan's National Institute of Advanced Industrial Science and Technology (AIST) at the 71th Autumn Meeting 2010 of the Japan Society of Applied Physics, which took place from Sept 14 to 17, 2010, in Japan.
The university and AIST made a SBD by combining diamond semiconductor and Schottky electrodes made by using ruthenium (Ru) and checked its switching performance. As a result, they confirmed that the SBD is capable of high-speed switching of 0.01μs and the recovery current dependent on the rate of change (di/dt) of current and parasitic inductance is as small as 40A/cm2. Therefore, the loss of the SBD is low.
The switching performance did not change when the temperature was changed between 25-200°C. So, the university and AIST concluded that the SBD using diamond semiconductor can potentially be applied to electric power conversion systems that do not use a cooling system.
Some SiC-based power semiconductor chips stably operate at temperatures higher than 200°. However, in such high-temperature environments, it becomes important to ensure the heat resistances of solder, elemental devices (including packages), peripheral circuits and so forth.