Zhores Ivanovich Alferov has been working on semiconductor heterostructures since 1962. His contributions to semiconductor heterostructure physics and technology, including investigations of injection properties, the development of lasers, solar cells, LEDs and epitaxy processes, have contributed significantly to the creation of modern heterostructure physics and electronics, leading to receiving the 2000 Nobel Prize in Physics for developing semiconductor heterostructures used in high-speed electronics and optoelectronics.
With a view to further promoting basic research in semiconductor physics and the effective use of Riber’s MBE systems, the Russian Academy of Sciences and Riber have agreed to jointly create a Center of Excellence on the premises of the Academic University in St Petersburg, Russia.
Combining the Academic University’s scientific and pedagogical capabilities and Riber’s expertise in MBE system design and use, the two parties aim to:
* design and implement a graduate course for Academic University students, aiming to teach the use of MBE technology for research and manufacturing of new nanotechnology devices; and
* design and implement a basic training course aimed at technicians and engineers worldwide who will operate MBE systems.
The creation of the new Center of Excellence follows the Rusnanoprize awarded to Riber by the Russian Nanotechnology Society in 2009.